𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Far infrared measurements of Ga0.47In0.53As/InP short period superlattices

✍ Scribed by T.S. Sethi; T. Dumelow; W.F. Sherman; T.J. Parker


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
165 KB
Volume
14
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Raman characterization of SiNx depositio
✍ B. Boudart; C. GaquiΓ¨re; M. Constant; A. Lorriaux; N. Lefebvre πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 93 KB πŸ‘ 1 views

Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperat