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Fabrication technique for GaInAsP/InP quantum wire structure by LP-MOVPE

✍ Scribed by P. Dasté; Y. Miyake; M. Cao; Y. Miyamoto; S. Arai; Y. Suematsu; K. Furuya

Book ID
103166401
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
586 KB
Volume
93
Category
Article
ISSN
0022-0248

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Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w