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Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar

✍ Scribed by R. Meyer; D. Grützmacher; H. Jürgensen; P. Balk


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
492 KB
Volume
93
Category
Article
ISSN
0022-0248

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