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Fabrication of Zn1−xCdxSe quantum dots by molecular beam epitaxy on the GaAs (110) cleaved surface

✍ Scribed by Hyun-Chul Ko; Doo-Cheol Park; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita


Book ID
114155965
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
109 KB
Volume
43-44
Category
Article
ISSN
0167-9317

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Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [