Epitaxial CeO2 buffer layers and YBa2Cu307\_~ thin films have been grown in situ on (1].02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2 Cu3 O7-6 and A12 03 as determined by depth profiling using x-ray photoelectron spectroscopy. Th
β¦ LIBER β¦
Fabrication of SmBa2Cu3O7Films on CeO2Buffered Sapphire
β Scribed by Jie Xiong; Wenfeng Qin; Xumei Cui; Bowan Tao; Yanrong Li
- Publisher
- Springer
- Year
- 2006
- Tongue
- English
- Weight
- 364 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0896-1107
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
YBa2Cu3O7βΞ΄-thin films on sapphire with
β
M. Maul; B. Schulte; P. HΓ€ussler; H. Adrian
π
Article
π
1994
π
Elsevier Science
π
English
β 166 KB
Improvements in the microstructure of YB
β
J.C. Nie; H. Yamasaki; H. Yamada; K. Develos-Bagarinao; Y. Nakagawa; Y. Mawatari
π
Article
π
2004
π
Elsevier Science
π
English
β 435 KB
YBa2Cu3O7 films grown on epitaxial MgO b
β
J. Talvacchio; G.R. Wagner; H.C. Pohl
π
Article
π
1989
π
Elsevier Science
π
English
β 314 KB
Epitaxial CeO2 buffer layers and cross-o
β
P.D. Grant; M.W. Denhoff; H. Tan
π
Article
π
1991
π
Elsevier Science
π
English
β 525 KB
Ultrathin YBa2Cu3O7 films with YBa2Cu2.7
β
I. Grekhov; V. Borevich; L. Delimova; I. Liniychuk; A. Lyublinsky
π
Article
π
1994
π
Elsevier Science
π
English
β 108 KB
A new type of buffer layer, based on Nb doped YBa2Cu307 material, has been used for high quality HTSC ultrathin film fabrication. This new material represents a dielectric continuum of YBa2NbO 6 phase with YBa2Cu307 phase inclusions. The later serve as nuclei while growing ultrathin YBa2Cu307 film o
DC transport properties of epitaxial sup
β
A Nigro; G Grimaldi; B Savo; S Pace; M.A Boffa; A.M Cucolo
π
Article
π
2004
π
Elsevier Science
π
English
β 275 KB