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Fabrication of multilevel silicon structures by anisotropic deep silicon etching

✍ Scribed by R. Huber; J. Conrad; L. Schmitt; K. Hecker; J. Scheurer; M. Weber


Book ID
114155538
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
429 KB
Volume
67-68
Category
Article
ISSN
0167-9317

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In this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels