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Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

โœ Scribed by Fei Gao; Martin A. Green; Gavin Conibeer; Eun-Chel Cho; Yidan Huang; Ivan Perez-Wurfl; Chris Flynn

Book ID
103819484
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
433 KB
Volume
254
Category
Article
ISSN
0169-4332

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Multilayers of Ge nanocrystals embedded
Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies
โœ S.R.C. Pinto; A.G. Rolo; A. Chahboun; Maja Buljan; A. Khodorov; R.J. Kashtiban; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 603 KB

In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 ยฐC to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing