𝔖 Bobbio Scriptorium
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Fabrication of high-quality poly-Si thin films combined with in situ real-time spectroscopic ellipsometry

✍ Scribed by Tetsuya Akasaka; Isamu Shimizu


Book ID
115991103
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
261 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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## Abstract Silicon‐germanium (Si~1βˆ’__x__~ Ge__~x~__:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH~4~ and GeH~4~ and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structu