Fabrication of high power RF MEMS switches
β Scribed by Ling Wang; Zheng Cui; Jia-Sheng Hong; Eamon P. McErlean; Robert B. Greed; Daniel C. Voyce
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 190 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract An experimental setup for the characterization of electromagnetically induced heat on MEMS devices operating in high RF power regimes (> 5 W) is here proposed. The technique is based on infrared (IR) imaging of onβprobe DUT, in working conditions. The present work focuses on switches. U
Some applications of RF MEMS switches, such as aircraft condition monitoring and distributed satellite communication, present a unique challenge for device design and reliability. This article examines these switches when operational temperatures in the range Ψ60Β°C to 100Β°C are envisioned. The basic
An electrostatically actuated broadband ohmic microswitch has been developed for RF and microwave applications. The switch is a three-terminal device based on a cantilever beam and is fabricated using an all-metal, surface-micromachining process. It operates in a hermetic environment obtained throug