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Fabrication of GaAs and InAs wires in nanochannel glass

✍ Scribed by Berry, A. D.; Tonucci, R. J.; Fatemi, M.


Book ID
120939638
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
482 KB
Volume
69
Category
Article
ISSN
0003-6951

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InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs=GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length=thickness) of up to 10 3 . Without any intentional doping, the structures showed clear