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Fabrication of free-standing GaN by using thermal decomposition of GaN

✍ Scribed by Kim, Sinae; Lee, Hyunjae; Kim, Siyoung; Choi, Sungkuk; Koo, Jieun; Chang, Jiho


Book ID
121740315
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
610 KB
Volume
398
Category
Article
ISSN
0022-0248

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## Abstract Proposed high‐power electronic and optoelectronic applications of GaN materials rely heavily on the effectiveness of heat removal from the devices. Here we report the results of our measurements of thermal conductivity in the thick free‐standing GaN films prepared by hydride vapor phase