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Fabrication of atomically defined oxide films on Si by laser molecular beam epitaxy

โœ Scribed by H. Koinuma; T. Ohnishi; T. Maeda; M.B. Lee; M. Kawasaki; M. Yoshimoto

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
337 KB
Volume
227
Category
Article
ISSN
0921-4526

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โœฆ Synopsis

Laser molecular beam epitaxy (MBE) has been verified to be a tool especially useful for fabricating epitaxial oxide films with atmically defined interface and thickness. We report here two cases of laser MBE applied successfully to heteroepitaxial growths of oxide films on Si; dielectric BaTiO 3 film on Si (100) with conductive TiN film inserted as buffer layer and direct growth of CeO 2 film on Si (111) with and without hydrogen termination of the surface.

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Photodetectors fabricated on heteroepita
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โœ N.A. Papanicolaou; G.W. Anderson; J.A. Modolo; A. Georgakilas ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 562 KB

Photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy. Our efforts were focused on enhancing the substrate surface quality and optimizing the deposition conditions during the early stages of growth of the GaAs on th