Controlled formation of oxide materials by laser molecular beam epitaxy
β Scribed by H. Koinuma; M. Yoshimoto
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 799 KB
- Volume
- 75
- Category
- Article
- ISSN
- 0169-4332
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Laser molecular beam epitaxy (MBE) has been verified to be a tool especially useful for fabricating epitaxial oxide films with atmically defined interface and thickness. We report here two cases of laser MBE applied successfully to heteroepitaxial growths of oxide films on Si; dielectric BaTiO 3 fil
We have identified crystal growth conditions in plasma-assisted molecular beam epitaxy (PAMBE) that leads to spontaneous formation of GaN nanostructure like nanowalls, nanotubes, and nanorods on c-plane sapphire. We have grown GaN on c-plane Al 2 O 3 substrate at temperatures 630, 680 and 780 1C. Th