Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE

✍ Scribed by Araki, Tsutomu ;Yamashita, Shuhei ;Yamaguchi, Tomohiro ;Yoon, Euijoon ;Nanishi, Yasushi

• Book ID: 105366467
• Publisher: John Wiley and Sons
• Year: 2012
• Tongue: English
• Weight: 419 KB
• Volume: 209
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201100520

✦ Synopsis

Abstract

a‐plane InN nanostructures were fabricated on a hole‐patterned a‐plane GaN template by electron‐cyclotron‐resonance plasma‐excited molecular beam epitaxy (ECR‐MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a sufficiently long In migration length. Polarity determination clearly revealed that a‐plane InN crystals have an anisotropic growth morphology. The InN growth rate in the N‐polar [000–1] direction is higher than those in the In‐polar [0001] and [1–100] directions. a‐plane InN nanowalls were fabricated by exploiting the different the growth rates in the 〈0001〉 and 〈1–100〉 directions.

magnified image

SEM image of position‐controlled a‐plane InN nanostructures grown by ECR‐MBE on a hole‐patterned a‐plane GaN template.