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Fabrication of 1.5 μm optically pumped Ga1−xInxAsyP1−y/InP vertical-cavity surface-emitting lasers

✍ Scribed by K. Streubel; J. André; J. Wallin; G. Landgren

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 743 KB
Volume: 28
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90066-3

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✦ Synopsis

We report the fabrication of Gal _xlnxAsyP~ _,./InP vertical-cavity surface-emitting lasers for long-wavelength operation and optical pumping. Bottom mirrors and active regions grown by metal-organic vapour-phase epitaxy showed high reflectivities and excellent wavelength tuning. Si/SiO 2 top mirrors were deposited by electron beam evaporation and shaped by lift-off. Laser mesas with various diameters and aspects ratios up to 14 were etched by reactive ion etching and a methane-based plasma. Lasing operation was obtained for mesa diameters down to 5 ~m. The average threshold power for the mesa of 5/~m diameter was 18 mW. Devices with diameters of 30/~m or more operated up to 70 °C.

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