Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

✍ Scribed by Robert P. Sarzała; Włodzimierz Nakwaski

• Publisher: Springer
• Year: 2006
• Tongue: English
• Weight: 701 KB
• Volume: 38
• Category: Article
• ISSN: 0306-8919
• DOI: 10.1007/s11082-006-0030-9