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Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

✍ Scribed by Robert P. Sarzała; Włodzimierz Nakwaski


Publisher
Springer
Year
2006
Tongue
English
Weight
439 KB
Volume
38
Category
Article
ISSN
0306-8919

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