๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

โœ Scribed by H. Ohta; M. Hirano; K. Nakahara; H. Maruta; T. Tanabe; M. Kamiya; T. Kamiya; H. Hosono


Book ID
125858644
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
512 KB
Volume
83
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Fabrication of a transparent p-n heteroj
โœ Kim, Dae-Sung ;Park, Tae-Jin ;Kim, Dae-Hyun ;Choi, Se-Young ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 109 KB

## Abstract An allโ€oxide transparent pโ€“n heterojunction on a glass substrate was fabricated. The structure of the diode was ITO electrode/pโ€CuAlO~2~/nโ€ZnO/In electrode on the glass substrate. The pโ€CuAlO~2~ thin film was deposited by eโ€beam evaporation, which was annealed by the wetโ€oxidation metho

A p-Type Amorphous Oxide Semiconductor a
โœ S. Narushima; H. Mizoguchi; K. Shimizu; K. Ueda; H. Ohta; M. Hirano; T. Kamiya; ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 200 KB ๐Ÿ‘ 1 views

**Oxide electronics**, which together with amorphous semiconductors could become a rapidโ€growth field, have come a step closer with the first report of a pโ€type amorphous oxide semiconductor, ZnOยทRh~2~O~3~. The thinโ€film deposition of this material at room temperature and the fabrication of pโ€“n hete