Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO
โ Scribed by H. Ohta; M. Hirano; K. Nakahara; H. Maruta; T. Tanabe; M. Kamiya; T. Kamiya; H. Hosono
- Book ID
- 125858644
- Publisher
- American Institute of Physics
- Year
- 2003
- Tongue
- English
- Weight
- 512 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0003-6951
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๐ SIMILAR VOLUMES
## Abstract An allโoxide transparent pโn heterojunction on a glass substrate was fabricated. The structure of the diode was ITO electrode/pโCuAlO~2~/nโZnO/In electrode on the glass substrate. The pโCuAlO~2~ thin film was deposited by eโbeam evaporation, which was annealed by the wetโoxidation metho
**Oxide electronics**, which together with amorphous semiconductors could become a rapidโgrowth field, have come a step closer with the first report of a pโtype amorphous oxide semiconductor, ZnOยทRh~2~O~3~. The thinโfilm deposition of this material at room temperature and the fabrication of pโn hete