✦ LIBER ✦
A p-Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes
✍ Scribed by S. Narushima; H. Mizoguchi; K. Shimizu; K. Ueda; H. Ohta; M. Hirano; T. Kamiya; H. Hosono
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 200 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0935-9648
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✦ Synopsis
Oxide electronics, which together with amorphous semiconductors could become a rapid‐growth field, have come a step closer with the first report of a p‐type amorphous oxide semiconductor, ZnO·Rh~2~O~3~. The thin‐film deposition of this material at room temperature and the fabrication of p–n heterojunction diodes on flexible plastic sheets (see Figure) are demonstrated.