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Fabrication and performance of p–i–n CdTe radiation detectors

✍ Scribed by Madan Niraula; Daisuke Mochizuki; Toru Aoki; Yasuhiro Tomita; Tokuaki Nihashi; Yoshinori Hatanaka

Book ID
108415492
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
161 KB
Volume
436
Category
Article
ISSN
0168-9002

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## Abstract We report on the atmospheric pressure metalorganic vapour phase epitaxy of both nominally undoped and iodine (I) donor doped CdTe layers on high resistivity (111)B CdTe substrates, as a preliminary step towards the fabrication of p‐i‐n diode X‐ray detectors. CdTe epilayers were grown at