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Development of a homoepitaxial technology for fabrication of X- and γ-ray detectors based on CdTe p-i-n diodes

✍ Scribed by N. Lovergine; M. Traversa; P. Paiano; I. Farella; P. Prete; A. Cola; F. Quaranta; A.M. Mancini

Book ID
108230790
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
203 KB
Volume
166
Category
Article
ISSN
0920-5632

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## Abstract We report on the atmospheric pressure metalorganic vapour phase epitaxy of both nominally undoped and iodine (I) donor doped CdTe layers on high resistivity (111)B CdTe substrates, as a preliminary step towards the fabrication of p‐i‐n diode X‐ray detectors. CdTe epilayers were grown at