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Portable γ- and X-ray analyzers based on CdTe p–i–n detectors

✍ Scribed by A.K. Khusainov; T.A. Antonova; S.V. Bahlanov; A.V. Derbin; V.V. Ivanov; V.V. Lysenko; F. Morozov; V.G. Mouratov; V.N. Muratova; Y.A. Petukhov; A.M. Pirogov; O.P. Polytsia; V.D. Saveliev; V.A. Solovei; K.A. Yegorov; M.P. Zhucov

Book ID: 108415328
Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 433 KB
Volume: 428
Category: Article
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(99)00010-8

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## Abstract We report on the atmospheric pressure metalorganic vapour phase epitaxy of both nominally undoped and iodine (I) donor doped CdTe layers on high resistivity (111)B CdTe substrates, as a preliminary step towards the fabrication of p‐i‐n diode X‐ray detectors. CdTe epilayers were grown at