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Fabrication and analysis of deep submicron strained-Si n-MOSFET's

✍ Scribed by Rim, K.; Hoyt, J.L.; Gibbons, J.F.


Book ID
114538210
Publisher
IEEE
Year
2000
Tongue
English
Weight
220 KB
Volume
47
Category
Article
ISSN
0018-9383

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