Improving strained-Si on Si1-xGex deep submicron MOSFETs performance by means of a stepped doping profile

✍ Scribed by Gani, F.; Roldan, J.B.; Kosina, H.; Grasser, T.

• Book ID: 114538807
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 145 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.944172