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Extrinsic tristability as the cause of bistability in resonant-tunneling diodes

โœ Scribed by B. Jogai


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
185 KB
Volume
11
Category
Article
ISSN
0749-6036

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๐Ÿ“œ SIMILAR VOLUMES


Effective mass in the barriers of GaAs/A
โœ D. Landheer; G.C. Aers; Z.R. Wasilewski ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 496 KB

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu