✦ LIBER ✦

Extremely flat growth-interrupted InAlAs surface grown on a (4 1 1)A-oriented InP substrate by molecular beam epitaxy

✍ Scribed by Issei Watanabe; Takahiro Kitada; Kenji Kanzaki; Daisaku Kawaura; Masashi Yamamoto; Satoshi Shimomura; Satoshi Hiyamizu

Book ID: 104428078
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 138 KB
Volume: 13
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00334-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

InAs quantum dots in InAlAs matrix on (0

InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy

✍ H Li; Z Wang; J Liang; B Xu; J Wu; Q Gong; C Jiang; F Liu; W Zhou 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 172 KB

Continuous wavelength tuning of InAs qua

Continuous wavelength tuning of InAs quantum dots on InP (1 0 0) and (3 1 1)A substrates by chemical-beam epitaxy

✍ Q Gong; R Nötzel; P.J van Veldhoven; J.H Wolter 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 423 KB

Structural and optical properties of non

Structural and optical properties of nonpolar (1 1 −2 0) a-plane GaN grown on (1 −1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

✍ Mohana K. Rajpalke; Basanta Roul; Mahesh Kumar; Thirumaleshwara N. Bhat; Neeraj 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 657 KB

Growth conditions effects on optical pro

Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (1 1 3)A substrate

✍ F. Saidi; L. Bouzaïene; L. Sfaxi; H. Maaref 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 295 KB

Structural, optical, and hydrogenation p

Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy

✍ S.C. Su; Y.M. Lu; Z.Z. Zhang; B.H. Li; D.Z. Shen; B. Yao; J.Y. Zhang; D.X. Zhao; 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 367 KB

ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall

Growth of highly-oriented CaCu3Ti4O12 th

Growth of highly-oriented CaCu3Ti4O12 thin films on SrTiO3 (1 0 0) substrates by a chemical solution route

✍ Lixin Feng; Youwen Wang; Yueyue Yan; Guanghan Cao; Zhengkuan Jiao 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 360 KB

Extremely flat growth-interrupted InAlAs surface grown on a (4&#xa0;1&#xa0;1)A-oriented InP substrate by molecular beam epitaxy

Extremely flat growth-interrupted InAlAs surface grown on a (4 1 1)A-oriented InP substrate by molecular beam epitaxy