Extraction techniques for FET switch modeling
β Scribed by Ehoud, A.; Dunleavy, L.P.; Lazar, S.C.; Branson, R.E.
- Book ID
- 114552367
- Publisher
- IEEE
- Year
- 1995
- Tongue
- English
- Weight
- 536 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0018-9480
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## This paper presents an analytical expression for the con¨ersion from a measured noise figure to the associated drain noise temperature in the FET temperature noise model. A commercially a¨ailable GaAs FET is modeled. Comparisons between measured and modeled noise parameters are presented in the
## Abstract A scalable lumpedβelement equivalent circuit of a prematched, multifinger FET cell is proposed. The model is derived using a global modeling approach that exploits both circuit and fullβwave analysis, accounting for phase delay along gate and drain manifolds. The availability of such a