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A direct extraction formula for the FET temperature noise model

✍ Scribed by Mikael Garcia; Jörgen Stenarson; Herbert Zirath; Ilcho Angelov


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
173 KB
Volume
16
Category
Article
ISSN
0895-2477

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✦ Synopsis


This paper presents an analytical expression for the con¨ersion from a measured noise figure to the associated drain noise temperature in the FET temperature noise model. A commercially a¨ailable

GaAs FET is modeled. Comparisons between measured and modeled noise parameters are presented in the frequency range 2᎐26 GHz.