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Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films

โœ Scribed by Kimura, M.; Furuta, M.; Kamada, Y.; Hiramatsu, T.; Matsuda, T.; Furuta, H.; Li, C.; Fujita, S.; Hirao, T.

Book ID
114620575
Publisher
IEEE
Year
2011
Tongue
English
Weight
855 KB
Volume
58
Category
Article
ISSN
0018-9383

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โœ Zhenguo Ji; Qinan Mao; Weiqing Ke ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 929 KB

Cu/ZnO/n + -Si structures were prepared by magnetron sputtering of a layer of ZnO thin film onto heavily doped silicon substrate, followed by thermal evaporation of a thin layer of metallic Cu. The resistive switching characteristics of Cu/ZnO/n + -Si structures were investigated as a function of ox