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Effect of sputtering oxygen partial pressures on structure and physical properties of high resistivity ZnO films

โœ Scribed by J.J Chen; Y Gao; F Zeng; D.M Li; F Pan

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
853 KB
Volume
223
Category
Article
ISSN
0169-4332

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โœ Zhenguo Ji; Qinan Mao; Weiqing Ke ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 929 KB

Cu/ZnO/n + -Si structures were prepared by magnetron sputtering of a layer of ZnO thin film onto heavily doped silicon substrate, followed by thermal evaporation of a thin layer of metallic Cu. The resistive switching characteristics of Cu/ZnO/n + -Si structures were investigated as a function of ox