Extended defects in III-V semiconductor
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Dr. G. Ferenczi; L. DΓ³zsa
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Article
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1981
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John Wiley and Sons
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English
β 315 KB
π 1 views
## Abstract A new class of defects characterized by inherent nonβexponential capture and emission processes was observed. A theory β based on the potential barrier model β is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc