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Exposure parameters in proton beam writing for hydrogen silsesquioxane

✍ Scribed by J.A. van Kan; F. Zhang; C. Zhang; A.A. Bettiol; F. Watt

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
628 KB
Volume
266
Category
Article
ISSN
0168-583X

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In proton beam writing (PBW) the only compatible resists which have demonstrated sub-100 nm features are PMMA and SU-8. In this paper, we present results on PBW using a new non C based, hydrogen silsesquioxane (HSQ) resist. The results obtained with PBW using the HSQ resist, show that HSQ behaves as

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In the frame of the European project MAGIC, a massively multibeam tool working at 5 kV is under installation in LETI premises. Because of its high resolution capability and suitable high exposure dose, hydrogen silsesquioxane (HSQ) is a good candidate for evaluating tool performances. In order to pr