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Experimental Study of Defect Formations in GaAs Devices Using Gain, Photoluminescence and Deep Level Transient Spectroscopy

✍ Scribed by Bielejec, E.; Vizkelethy, G.; Fleming, R. M.; Serkland, D. K.; McDonald, J. K.; Patrizi, G. A.; King, D. B.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Angular dependence of defect formation i

✍ B.J. Villis; J.C. McCallum 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 421 KB

Properties of metastable hydrogen-relate

✍ Tokuda, Yutaka; Kamiya, Kazuhiro; Okumura, Tsugunori 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 253 KB

High resolution deep level transient spe

✍ Evans-Freeman, J. H.; Kan, P. Y. Y.; Abdelgader, N. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 249 KB

Characterization of defects introduced i

✍ C. Nyamhere; A.G.M. Das; F.D. Auret; A. Chawanda; W. Mtangi; Q. Odendaal; A. Car 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 227 KB