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Experimental study and modeling of double-surrounding-gate and cylindrical silicon-on-nothing MOSFETs

โœ Scribed by Chen, Yijian; Kang, Weiling


Book ID
118176418
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
712 KB
Volume
97
Category
Article
ISSN
0167-9317

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Analytical model for threshold voltage a
โœ Abhinav Kranti; S. Haldar; R.S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 417 KB

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m