The impact of material / process interactions on low temperature CVD-O low-k dielectric film properties are 3 presented. The film under investigation is deposited following a three-step process consisting of a low temperature chemical vapor deposition (CVD), an ex situ high temperature cure in a con
Experimental results on the integration of copper and CVD ultra low k material
β Scribed by Matthias Uhlig; A. Bertz; J.-W. Erben; S.E. Schulz; T. Gessner; D. Zeidler; C. Wenzel; J. Bartha
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 329 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0167-9317
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In the back end of line (BEOL) interconnections for 65 nm and beyond technology nodes, the integration of porous low dielectric constant (low k) materials is now needed to improve signal propagation. Porosity in low k films drives new challenges concerning the different steps of the integration. Thu
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