𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Experimental and Simulated Results of SiC Microwave Power MESFETs

✍ Scribed by Trew, R. J.

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
199 KB
Volume
162
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Admittance parameter and unilateral powe
Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications
✍ Adarsh Singh; Srikanta Bose; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 264 KB

## Abstract The admittance parameters and unilateral power gain of a nonself‐aligned GaN MESFET incorporating the parasitic elements along with gate‐length modulation are evaluated analytically in the present model. The cutoff frequency of the maximum available gain and the maximum frequency of osc