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Excitons and shallow impurities in GaAs-Ga1-xAlxAs semiconductor heterostructures within a fractional-dimensional space approach: Magnetic-field effects

✍ Scribed by Reyes-Gómez, E.; Matos-Abiague, A.; Perdomo-Leiva, C.; de Dios-Leyva, M.; Oliveira, L.


Book ID
111961010
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
170 KB
Volume
61
Category
Article
ISSN
1098-0121

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The dressed-band approach is used to treat the interaction of a laser field with semiconductor GaAs-(Ga,Al)As quantum wells and quantum dots. We adopt the Kane model and a renormalized-mass approximation. We calculate the effects originated by the laser-dressing on exciton energies in quantum-wells