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The Fractional-Dimensional Space Approach: Excitons and Shallow Impurities in Semiconductor Low-Dimensional Systems

✍ Scribed by E. Reyes-Gómez; A. Matos-Abiague; M. de Dios-Leyva; L.E. Oliveira


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
117 KB
Volume
220
Category
Article
ISSN
0370-1972

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The dressed-band approach is used to treat the interaction of a laser field with semiconductor GaAs-(Ga,Al)As quantum wells and quantum dots. We adopt the Kane model and a renormalized-mass approximation. We calculate the effects originated by the laser-dressing on exciton energies in quantum-wells