A Dressed-Atom Approach to Laser Effects
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Oliveira, L.E. ;Latg�, A. ;Brandi, H.S.
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Article
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2002
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John Wiley and Sons
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English
⚖ 92 KB
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The dressed-band approach is used to treat the interaction of a laser field with semiconductor GaAs-(Ga,Al)As quantum wells and quantum dots. We adopt the Kane model and a renormalized-mass approximation. We calculate the effects originated by the laser-dressing on exciton energies in quantum-wells