A Dressed-Atom Approach to Laser Effects in Excitons and Shallow Impurities in Low-Dimensional Semiconductor Heterostructures

✍ Scribed by Oliveira, L.E. ;Latg�, A. ;Brandi, H.S.

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 92 KB
• Volume: 190
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200204)190:3<667::aid-pssa667>3.0.co;2-w

✦ Synopsis

The dressed-band approach is used to treat the interaction of a laser field with semiconductor GaAs-(Ga,Al)As quantum wells and quantum dots. We adopt the Kane model and a renormalized-mass approximation. We calculate the effects originated by the laser-dressing on exciton energies in quantum-wells and on donor states in quantum wells and quantum dots. Present results suggest that the strong localization of the electronic and impurity states due to the quantum well and quantum dot and enhanced by laser confinement may result useful for manipulation of electronic and donor states in some proposed solid-state based quantum computers.