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Exciton binding energy in a quantum well

✍ Scribed by Gerlach, B.; Wüsthoff, J.; Dzero, M. O.; Smondyrev, M. A.


Book ID
125506780
Publisher
The American Physical Society
Year
1998
Tongue
English
Weight
478 KB
Volume
58
Category
Article
ISSN
1098-0121

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We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin

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