Excited states of donors bound toXvalleys in GaAs–AlAs type II structures
✍ Scribed by G. Weber; G.N. Carneiro
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 85 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We calculate the binding energies of 2s donor states bound to X valleys in type II GaAs-AlAs quantum well structures using an anisotropic variational method which enables us to take into account the effective mass anisotropy and quantum confinement. For a comparative study, we use two sets of effective masses obtained from different measurements [B.
📜 SIMILAR VOLUMES
We present a new examination of the phonon modes participating in the recombination processes from type II GaAs/AlAs superlattices. This is achieved through the use of a novel Raman resonance at the type II band gap, which provides a very precise, in-situ measurement technique for the important phon