Nature of the lowest electron states in short period GaAs-AlAs superlattices of type II
✍ Scribed by D. Scalbert; J. Cernogora; C. Benoit àla Guillaume; M. Maaref; F.F. Charfi; R. Planel
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 387 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0038-1098
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We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba
We present a new examination of the phonon modes participating in the recombination processes from type II GaAs/AlAs superlattices. This is achieved through the use of a novel Raman resonance at the type II band gap, which provides a very precise, in-situ measurement technique for the important phon