Laser ablation was used to realise piezoelectric films for use in a low-voltage cantilever bimorph actuator structure. Neodymiumdoped lead zirconium titanate (PZT) targets were ablated by a pulsed (\mathrm{XeCl}) excimer laser (wavelength (308 \mathrm{~nm}) ). The deposited films showed a better morphology than those ablated using a Nd:YAG laser. Since the deposited films had high density and small particulate size it was possible to produce a capacitor structure without causing short circuits during the second electrode deposition. The depositions were made onto the inner electrode layer on the silicon substrates (thickness (50 \mu \mathrm{m}) ) at a distance of (20 \mathrm{~mm}) between substrate and target using a laser beam fluence of (1 \mathrm{~J} / \mathrm{cm}^{2}). Growth rates werc typically (3 \AA / \mathrm{s}), Films were analysed by EDS, XRD and Raman measurements. Both the target density and the beam intensity were important in determining the film composition. The as-deposited PZT films were amorphous. Optimising the annealing conditions resulted in trigonal perovskite being achieved as the main phase. Direct current bending characteristics of the low-voltage bimorph cantilever element structure were measured as a function of voltage using a Michelson interferometer.