We have studied the Ge-Si interdiffusion from structures in which βΌ300 nm-thick pure Ge(:B) layers were grown on Si 200 mm substrates by CVD at 450 β’ C. As-grown samples were capped with SiO 2 and then annealed in the 750-900 β’ C range for various times. Using the secondary ion mass spectrometry (SI
β¦ LIBER β¦
EXAFS study of a buried germanium layer in silicon
β Scribed by Charles E. Bouldin
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 180 KB
- Volume
- 158
- Category
- Article
- ISSN
- 0921-4526
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