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EXAFS of near monolayer hafnium film

✍ Scribed by Troy W. Barbee Jr.; Joe Wong

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 142 KB
Volume: 158
Category: Article
ISSN: 0921-4526
DOI: 10.1016/0921-4526(89)90433-x

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## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow