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EXAFS characterisation of Ge nanocrystals in silica

โœ Scribed by M.C. Ridgway; G.de M. Azevedo; C.J. Glover; R.G. Elliman; D.J. Llewellyn; A. Cheung; B. Johannessen; D.A. Brett; G.J. Foran

Book ID
113822833
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
415 KB
Volume
218
Category
Article
ISSN
0168-583X

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Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 ร‚ 10 11 -2 ร‚ 10 13 cm ร€2 ) than previously reported. Size and depth distributions as well as structural disorder in the NCs were measured by RBS, TEM, SAX