The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for t
β¦ LIBER β¦
Evolution of wetting layer in InAs/GaAs quantum dot system
β Scribed by Y. H. Chen; X. L. Ye; Z. G. Wang
- Book ID
- 107470150
- Publisher
- Springer-Verlag
- Year
- 2006
- Tongue
- English
- Weight
- 364 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1931-7573
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