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Evolution of the microdefect structure in silicon on isothermal annealing as determined by X-ray diffractometry

✍ Scribed by Kyslovskyy, Ye. M. ;Vladimirova, T. P. ;Olikhovskii, S. I. ;Molodkin, V. B. ;Kochelab, E. V. ;Seredenko, R. F.

Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 504 KB
Volume: 204
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200675680

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✦ Synopsis

Abstract

The dynamical theory of X‐ray diffraction by imperfect crystals with randomly distributed microdefects, applicable to double‐crystal diffractometry (DCD), has been extended to account for the simultaneous presence of several types of microdefects. The obtained formulae for coherent and diffuse components of the rocking curve (RC) have been applied to the quantitative characterization of the complex microdefect structure in silicon samples annealed at 750 °C for various time intervals by using high‐resolution double‐crystal X‐ray diffraction measurements. Time dependencies of concentrations and average sizes of oxygen precipitates and dislocation loops have been determined by using characterization results. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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