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Evolution from point to extended defects in ion implanted silicon

✍ Scribed by Benton, J. L.; Libertino, S.; KringhoÌ¸j, P.; Eaglesham, D. J.; Poate, J. M.; Coffa, S.

Book ID: 120047165
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 666 KB
Volume: 82
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.365583

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