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Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure

✍ Scribed by Gyungock Kim; Kwang Man Koh; Chong Hoon Kim

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
167 KB
Volume
29
Category
Article
ISSN
0749-6036

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✦ Synopsis

The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW.

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